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| MOQ: | 1個 |
| 価格: | USD9.99-99.99 |
| 標準パッケージ: | 真空袋+カートン |
| 配達期間: | 8～9営業日 |
| 決済方法: | T/T |
| 供給能力: | 5000PCS/月 |
The F4BM275 is manufactured through scientifically formulated and strictly controlled lamination processes using glass fabric, polytetrafluoroethylene resin, and PTFE film. Its electrical performance represents a certain improvement over F4B, primarily reflected in a wider dielectric constant range, lower dielectric loss, increased insulation resistance values, and enhanced performance stability. This product can effectively substitute for similar foreign products.
The F4BM and F4BME share the same dielectric layer but differ in the copper foil used: F4BM utilizes ED copper foil and is suitable for applications without PIM (Passive Intermodulation) requirements; F4BME utilizes reverse-treated RTF copper foil, offering excellent PIM performance, more precise circuit control, and lower conductor loss.
Both F4BM and F4BME achieve precise dielectric constant control by adjusting the ratio between PTFE resin and glass fabric. This formulation achieves low loss while enhancing material dimensional stability. A higher dielectric constant corresponds to a higher glass fiber ratio, resulting in better dimensional stability, lower coefficient of thermal expansion, and improved temperature drift characteristics, albeit with a slight increase in dielectric loss.
Product Features
Typical Applications
| Product Technical Parameters | Product Model & Data Sheet | |||
| Product Features | Test Conditions | Unit | F4BM275 | |
| Dielectric Constant (Typical) | 10GHz | / | 2.75 | |
| Dielectric Constant Tolerance | / | / | ±0.05 | |
| Loss Tangent (Typical) | 10GHz | / | 0.0015 | |
| 20GHz | / | 0.0021 | ||
| Dielectric Constant Temperature Coefficient | -55ºC～150ºC | PPM/℃ | -92 | |
| Peel Strength | 1 OZ F4BM | N/mm | >1.8 | |
| 1 OZ F4BME | N/mm | >1.6 | ||
| Volume Resistivity | Standard Condition | MΩ.cm | ≥6×10^6 | |
| Surface Resistivity | Standard Condition | MΩ | ≥1×10^6 | |
| Electrical Strength (Z direction) | 5KW,500V/s | KV/mm | >28 | |
| Breakdown Voltage (XY direction) | 5KW,500V/s | KV | >35 | |
| Coefficientof Thermal Expansion | XY direction | -55 º~288ºC | ppm/ºC | 14, 16 |
| Z direction | -55 º~288ºC | ppm/ºC | 112 | |
| Thermal Stress | 260℃, 10s,3 times | No delamination | ||
| Water Absorption | 20±2℃, 24 hours | % | ≤0.08 | |
| Density | Room Temperature | g/cm3 | 2.28 | |
| Long-Term Operating Temperature | High-Low Temperature Chamber | ℃ | -55～+260 | |
| Thermal Conductivity | Z direction | W/(M.K) | 0.38 | |
| PIM | Only applicable to F4BME | dBc | ≤-159 | |
| Flammability | / | UL-94 | V-0 | |
| Material Composition | / | / | PTFE, Fiberglass Cloth F4BM paired with ED copper foil, F4BME paired with reverse-treated (RTF) copper foil. |
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|
|
| MOQ: | 1個 |
| 価格: | USD9.99-99.99 |
| 標準パッケージ: | 真空袋+カートン |
| 配達期間: | 8～9営業日 |
| 決済方法: | T/T |
| 供給能力: | 5000PCS/月 |
The F4BM275 is manufactured through scientifically formulated and strictly controlled lamination processes using glass fabric, polytetrafluoroethylene resin, and PTFE film. Its electrical performance represents a certain improvement over F4B, primarily reflected in a wider dielectric constant range, lower dielectric loss, increased insulation resistance values, and enhanced performance stability. This product can effectively substitute for similar foreign products.
The F4BM and F4BME share the same dielectric layer but differ in the copper foil used: F4BM utilizes ED copper foil and is suitable for applications without PIM (Passive Intermodulation) requirements; F4BME utilizes reverse-treated RTF copper foil, offering excellent PIM performance, more precise circuit control, and lower conductor loss.
Both F4BM and F4BME achieve precise dielectric constant control by adjusting the ratio between PTFE resin and glass fabric. This formulation achieves low loss while enhancing material dimensional stability. A higher dielectric constant corresponds to a higher glass fiber ratio, resulting in better dimensional stability, lower coefficient of thermal expansion, and improved temperature drift characteristics, albeit with a slight increase in dielectric loss.
Product Features
Typical Applications
| Product Technical Parameters | Product Model & Data Sheet | |||
| Product Features | Test Conditions | Unit | F4BM275 | |
| Dielectric Constant (Typical) | 10GHz | / | 2.75 | |
| Dielectric Constant Tolerance | / | / | ±0.05 | |
| Loss Tangent (Typical) | 10GHz | / | 0.0015 | |
| 20GHz | / | 0.0021 | ||
| Dielectric Constant Temperature Coefficient | -55ºC～150ºC | PPM/℃ | -92 | |
| Peel Strength | 1 OZ F4BM | N/mm | >1.8 | |
| 1 OZ F4BME | N/mm | >1.6 | ||
| Volume Resistivity | Standard Condition | MΩ.cm | ≥6×10^6 | |
| Surface Resistivity | Standard Condition | MΩ | ≥1×10^6 | |
| Electrical Strength (Z direction) | 5KW,500V/s | KV/mm | >28 | |
| Breakdown Voltage (XY direction) | 5KW,500V/s | KV | >35 | |
| Coefficientof Thermal Expansion | XY direction | -55 º~288ºC | ppm/ºC | 14, 16 |
| Z direction | -55 º~288ºC | ppm/ºC | 112 | |
| Thermal Stress | 260℃, 10s,3 times | No delamination | ||
| Water Absorption | 20±2℃, 24 hours | % | ≤0.08 | |
| Density | Room Temperature | g/cm3 | 2.28 | |
| Long-Term Operating Temperature | High-Low Temperature Chamber | ℃ | -55～+260 | |
| Thermal Conductivity | Z direction | W/(M.K) | 0.38 | |
| PIM | Only applicable to F4BME | dBc | ≤-159 | |
| Flammability | / | UL-94 | V-0 | |
| Material Composition | / | / | PTFE, Fiberglass Cloth F4BM paired with ED copper foil, F4BME paired with reverse-treated (RTF) copper foil. |
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